split dual si/sic hybrid igbt module 100 amperes/1200 volts QID1210005 1 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in high frequency applications; upwards of 30 khz for hard switching applications and 80 khz for soft switching applications. each module consists of two igbt transistors with each transistor having a reverse- connected super-fast recovery free-wheel silicon carbide schottky diode. all components and inter - connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low e sw(off) aluminum nitride isolation discrete super-fast recovery free-wheel silicon carbide schottky diode low internal inductance 2 individual switches per module isolated baseplate for easy heat sinking copper baseplate applications: energy saving power systems such as: fans; pumps; consumer appliances high frequency type power systems such as: ups; high speed motor drives; induction heating; welder; robotics high temperature power systems such as: power electronics in electric vehicle and aviation systems outline drawing and circuit diagram dimensions inches millimeters a 4.32 109.8 b 2.21 56.1 c 0.71 18.0 d 3.700.02 94.00.5 e 2.026 51.46 f 3.17 80.5 g 1.96 49.8 h 1.00 25.5 k 0.87 22.0 l 0.266 6.75 m 0.26 6.5 n 0.59 15.0 p 0.586 14.89 dimensions inches millimeters q 0.449 11.40 r 0.885 22.49 s 1.047 26.6 t 0.15 3.80 u 0.16 4.0 v 0.30 7.5 w 0.045 1.15 x 0.03 0.8 y 0.16 4.0 z 0.47 12.1 aa 0.17 dia. 4.3 dia. ab 0.10 dia. 2.5 dia. ac 0.08 dia. 2.1 dia. g1 (15 - 16) e1 (13 - 14) c1 (10 - 12) e2 c2 e1 c1 s1 g1 s2 g2 e1 (7 - 9) g2 (19 - 20) e2 (17 - 18) c2 (4 - 6) e2 (1 - 3) p q q q t r s d 1 2 3 4 5 6 7 8 9 10 11 12 15 14 13 16 19 18 17 20 f a l w v t g b m n c h k detail "a" x u detail "a" e aa ab z y ac detail "b" detail "b"
2 QID1210005 split dual si/sic hybrid igbt module 100 amperes/1200 volts 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol QID1210005 units junction temperature t j C40 to 150 c storage temperature t stg C40 to 150 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 100* amperes peak collector current i cm 200* amperes emitter current** (t c = 25c) i e 80* amperes repetitive peak emitter current (t c = 25c, t p = 10ms, half sine pulse)** i em 455* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 730 watts mounting torque, m6 mounting 40 in-lb weight 270 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts igbt electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c 5.0 6.5 volts i c = 100a, v ge = 15v, t j = 125c 5.0 volts total gate charge q g v cc = 600v, i c = 100a, v ge = 15v 450 nc input capacitance c ies 16 nf output capacitance c oes v ce = 10v, v ge = 0v 1.3 nf reverse transfer capacitance c res 0.3 nf inductive turn-on delay time t d(on) v cc = 600v, i c = 100a, tbd ns load rise time t r v ge1 = v ge2 = 15v, tbd ns switch turn-off delay time t d(off) r g = 3.1, tbd ns timefall time t f inductive load switching operation tbd ns * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector silicon carbide schottky diode (fwdi).
QID1210005 split dual si/sic hybrid igbt module 100 amperes/1200 volts 3 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com reverse schottky diode characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units diode forward voltage v fm i f = 80a, v gs = -5v 1.6 2.0 volts i f = 80a, v gs = -5v, t j = 175c 2.5 3.2 volts diode reverse current i r v r = 1200v 140 800 a v r = 1200, t j = 150c 260 1600 a diode capacitive charge q c v r = 1200v, i f = 80a, di/dt = 800a/s 520 nc thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, 0.17 c/w t c reference point under chips thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference 0.304 c/w t c reference point under chips contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied 0.04 c/w external gate resistance r g 3.1 31 internal inductance l int igbt part 10 nh
4 QID1210005 split dual si/sic hybrid igbt module 100 amperes/1200 volts 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 200 150 0 5 15 100 50 0 20 v ge = 10v t j = 25c t j = 125c i c = 200a i c = 100a i c = 40a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 50 0 v ge = 20v 10 11 12 13 14 15 9 8 t j = 25 c 100 150 200 10 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 9 4 5 6 3 0 50 150 7 2 8 1 0 200 v ge = 15v t j = 25c t j = 125c 100
QID1210005 split dual si/sic hybrid igbt module 100 amperes/1200 volts 5 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com t j = 75c forward voltage, v f , (volts) forward current, i f , ( a) free-wheel schottky diode forward characteristics (typical) 160 0 21 3 4 5 128 96 64 32 0 reverse voltage, v r , (volts) reverse current, i r , ( a) free-wheel schottky diode reverse characteristics (typical) 1600 0 1000 500 1500 2000 1280 960 640 320 0 t j = 25c t j = 125c t j = 175c t j = 25c t j = 175c t j = 75c t j = 125c collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 3.1 t j = 125c inductive load 10 3 tbd collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 v ge = 0v c ies c oes c res 10 -1
6 QID1210005 split dual si/sic hybrid igbt module 100 amperes/1200 volts 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 100 200 400 300 500 600 700 v cc = 600v v cc = 400v i c = 100a collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 600v v ge = 15v r g = 3.1 t j = 125c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) e sw(on) e sw(off) gate resistance, r g , (?) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i c = 100a t j = 125c inductive load c snubber at bus 10 2 switching loss vs. gate resistance (typical) e sw(on) e sw(off) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 3.1 t j = 125c inductive load c snubber at bus 10 3 reverse recovery switching loss vs. emitter current (typical) tbd tbd tbd
QID1210005 split dual si/sic hybrid igbt module 100 amperes/1200 volts 7 12/12 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.17c/w (igbt) r th(j-c) = 0.304c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i e = 100a t j = 125c inductive load c snubber at bus 10 2 reverse recovery switching loss vs. gate resistance (typical) tbd
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